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| (R) BAT74 SMALL SIGNAL SCHOTTKY DIODE FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP EXTREMELY FAST SWITCHING SURFACE MOUNT DEVICE DESCRIPTION Two separate Schottky barrier diodes encapsulated in a SOT-143 small SMD package. A2 A1 K2 K1 A1 A2 K1 K2 SOT-143 ABSOLUTE RATINGS (limiting values) Symbol VRRM IFRM IFSM Ptot Tstg Tj TL Parameter Repetitive peak reverse voltage Repetitive peak forward current = 0.33 Value 30 0.5 1 250 - 65 to +150 150 260 Unit V A A mW C C C Surge non repetitive forward current (tp=10ms sinusoidal) Power Dissipation (note 1) Maximum storage temperature range Maximum operating junction temperature * Maximum temperature for soldering during 10s Tamb = 50C Note 1: Ptot is the total dissipation of both diodes *: dPtot 1 < thermal runaway condition for a diode on its own heatsink Rth(j-a) dTj 1/4 June 1999 - Ed: 3A BAT74 THERMAL RESISTANCE Symbol Rth (j-a) Junction to Ambient (*) Parameter Value 400 Unit C/W (*) Mounted on epoxy board with recommended pad layout. STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol VF * Parameters Forward voltage drop Tests conditions Tj = 25C IF = 0.1 mA IF = 1 mA IF = 10 mA IF = 30 mA IF = 100 mA IR ** Reverse leakage current Tj = 25C Tj = 100C Pulse test: * tp = 380 s, < 2% ** tp = 5 ms, < 2% Min. Typ. Max. 240 320 400 500 900 1 100 Unit mV VR = 30 V A DYNAMIC CHARACTERISTICS (Tj = 25 C) Symbol C trr Parameters Junction Capacitance Reverse Recovery Time Tests conditions Tj = 25C IF = 10 mA Irr = 1 mA VR = 1 V F = 1 MHz Min. Typ. Max. 10 5 Unit pF ns IR = 10 mA Tj = 25C RL = 100 Fig.1 : Average forward power dissipation versus average forward current. PF(av)(W) 0.30 = 0.1 = 0.2 = 0.33 Fig.2 : Average forward current versus ambient temperature ( = 0.33). IF(av)(A) 0.20 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0.00 0.25 0.20 0.15 0.10 0.05 0.00 0.00 = 0.05 =1 T T IF(av) (A) 0.05 0.10 0.15 0.20 =tp/T tp =tp/T tp Tamb(C) 50 75 100 125 150 0.25 0.30 0 25 2/4 BAT74 Fig.3 : Non repetitive surge peak forward current versus overload duration (maximum values). Fig.4 : Relative variation of thermal impedance junction to case versus pulse duration (alumine substrate 10mm x 8mm x 0.5mm). Zth(j-a)/Rth(j-a) 1E+0 = 0.5 = 0.2 IM(A) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 1E-3 Ta=25C 1E-1 = 0.1 Ta=50C Ta=100C IM t 1E-2 Single pulse T =0.5 t(s) 1E-2 1E-1 1E+0 tp(s) 1E-3 1E-3 1E-2 1E-1 1E+0 =tp/T tp 1E+1 1E+2 Fig.5 : Reverse leakage current versus reverse voltage applied (typical values). IR(A) 1E+2 Tj=100C Fig.6 : Junction capacitance versus reverse voltage applied. IR(A) 1E+4 VR=30V 1E+3 1E+2 1E+1 1E+0 1E-1 1E-2 1E+1 1E+0 Tj=25C Tj=50C 1E-1 VR(V) 0 5 10 15 20 25 30 Tj(C) 1E-2 0 25 50 75 100 125 150 Fig.7 : Junction capacitance versus reverse voltage applied (typical values). C(pF) 10 F=1MHz Tj=25C Fig.8 : Forward voltage drop versus forward current (typical values). IFM(A) 5E-1 1E-1 5 1E-2 Tj=50C Tj=100C 2 VR(V) 1 1 2 5 10 20 30 1E-3 Tj=25C VFM(V) 1E-4 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 3/4 BAT74 PACKAGE MECHANICAL DATA SOT-143 DIMENSIONS D e1 C REF. A A1 B B1 C D E e1 e2 H S Millimeters Min. Typ. Max. Min. 0.89 1.12 0.013 0.1 0.76 0.94 0.37 0.51 0.085 0.18 2.8 3.04 1.2 1.4 1.92 BSC 0.2 BSC 2.1 2.64 0.55 ref Inches Typ. Max. 0.350 0.441 0.005 0.039 0.299 0.370 0.146 0.201 0.033 0.071 1.102 1.197 0.472 0.551 0.756 BSC 0.0787 BSC 0.827 1.039 0.217 ref H E L e2 b1 b A A1 FOOTPRINT DIMENSIONS (in millimeters) 1.92 0.95 0.2 2.25 1.1 0.65 Ordering type BAT74 Marking D89 Package SOT-143 Weight 0.01g Base qty 3000 Delivery mode Tape & reel Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4 |
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